Microstructure and Composition Design of Magnetic Ni-Mn-Sn Co-sputter Deposited Films

A. Quintana-Nedelcos *

Department of Advanced Materials, San Luis Potosi Institute of Scientific Research and Technology, San Luis Potosí, México.

J. L. Sanchez-Llamazares

Department of Advanced Materials, San Luis Potosi Institute of Scientific Research and Technology, San Luis Potosí, México.

T. García-Fernández

Department of Physics, Autonomous University of Mexico City, México DF, México.

S. Guvenc

Department of Physics, Bogaziçi University, Istanbul, Turkey.

M. Yumak

Department of Physics, Bogaziçi University, Istanbul, Turkey.

C. García

Department of Physics, Bogaziçi University, Istanbul, Turkey and Department of Physics, Federico Santa María Technical University, Valparaiso, Chile.

*Author to whom correspondence should be addressed.


Abstract

In this work, we study the effect of the substrate temperature (ST) during sputter-deposition as well as co-sputtering deposition on the fabrication of nanostructured Ni-Mn-Sn thin films. Sputtered films show Mn losses of around 10 at.% while the average grain size (<d>) increased from 30 nm to 105 nm with the increasing of ST. Mn losses compensation is proposed by co-sputtered deposition. With such a purpose a variable electrical power was applied to the radio frequency (RF) Mn cathode. By increasing the electrical power applied to the RF Mn cathode both Mn and Ni contents approach to the targeted nominal composition Ni:Mn:Sn = 50:37:13. Elemental chemical composition analyses show that the composition varied between Ni61.5Mn26.2Sn12.3 and Ni54.6Mn30.5Sn14.9 when the applied RF-power increased from 0 W to 30 W.

Keywords: Ni-Mn-Sn, magnetic shape memory alloys, sputtering, co-sputtering deposition.


How to Cite

Quintana-Nedelcos, A., J. L. Sanchez-Llamazares, T. García-Fernández, S. Guvenc, M. Yumak, and C. García. 2015. “Microstructure and Composition Design of Magnetic Ni-Mn-Sn Co-Sputter Deposited Films”. Journal of Scientific Research and Reports 6 (6):476-82. https://doi.org/10.9734/JSRR/2015/16672.

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